Description

Reliability, cost and performance form the Value Triangle wich determines the relationship between the microelectronics industry and its customers. In our group, we have an experience of more than 20 years in the study of the physical mechanisms that limit the reliability of MOS devices. In particular, we focus on the physics of the mechanisms that limit the lifetime of the gate insulator, a fundamental element of these devices. We have experimence in the physics of failure but also in the statistical tools required to develop innovative reliability assessment and technology qualification at the industrial level.

Principal Researchers

Jordi Suñé                        (Necessites javascript per veure aquest correu-e)

Enrique Miranda               (Necessites javascript per veure aquest correu-e)

Recent publications

• E. Miranda, P. Falbo, M. Nafria, F. Crupi, Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks, Applied Physics Letters 92, 253505 (2008).
• E. Miranda, K. L. Pey, R. Ranjan, and C. H. Tung, Equivalent circuit model for the gate leakage current in broken down HfO2/TaN/TiN gate stacks, IEEE Electron Device Letters 29, 1353 (2008)
• S.Tous, E.Y. Wu and J. Suñé, A compact model for oxide breakdown failure distribution in ultrathin oxides showing progressive breakdown, IEEE Electron Device Letters, vol. 29, 949-951 (2008).
• J. Suñé, E. Y. Wu and W. L. Lai, Statistics of competing post-breakdown failure modes in ultra-thin MOS devices, IEEE Transactions on Electron Devices, vol. 53 pp. 224-234 (2006)
• E. Miranda, Mesoscopic approach to progressive breakdown in ultra-thin oxides, Applied Physics Letters 91, 053502 (2007)

Group background in oxide reliability

Our group has been involved in research on oxide breakdown and its implications for CMOS reliability for more than 20 years. The following list of accomplishments gives an idea of our background in this field.

• Publication of 11 papers related to oxide breakdown at the IEEE International Electron Devices Meeting (from 1991 to 2007)
• Publication of more than 150 papers on oxide breakdown and reliability in high impact journals. Among these, 33 papers in IEEE journals (Transactions on Electron Devices + Electron Device Letters + Transactions on Nuclear Science +Transactions on Device and Materials Reliability); 26 papers in AIP journals (Applied Physics Letters+ Journal of Applied Physics); 3 papers in APS journals (Phys. Rev. Lett.+Phys. Rev.) and 22 papers in Reliability specific journals (Microelectronics Reliability+Quality&Reliability Engineering International). These papers have received more than 1000 citations as found in the Web of Science system.
• 20 invited papers on oxide breakdown in international journals and conferences, including 3 review papers and 5 tutorials at the IEEE International Reliability Physics Symposium (first one in 2001, last one in 2009), which is the most relevant conference of the field.
• Profs. J. Suñé and E. Miranda have served in the most important Technical Committees of relevant international conferences related to electron devices and reliability. J. S. served at the IEEE International Electron Devices Meeting CMOS and Interconnect Reliability Subcommittee (2000,2001), the International Reliability Physics Symposium (IRPS) Device Dielectrics Subcommittee (2000, 2001, 2002), the IEEE Semiconductor Interface Specialist Conference (SISC) (1999, 2000, 2001) and the International Conf. Insulating Films on Semiconductors (INFOS) technical program committee (2001-2005). E.M. has served in INFOS Technical Program Committee (2007,2009), IRPS Device Dielectrics Subcommittee (2008,2009), IPFA (International Symposium on the Physical and Failure Analysis of Integrated Circuits) Advisory Committee (2009).
• Since 2003 Prof. E. Miranda serves as a member of the IEEE- Electron Device Society Distinguished Lecturer Program and since 2001 he is member of the Editorial Board of the journal Microelectronics Reliability (Ed. Elsevier, England)
• Research work under contract for IBM Microelectronics (2002-2008) for the study of ultrathin-oxide breakdown and related reliability methodologies. We have also continuous research collaborations with international groups of recognized value such as the one lead by Prof. Iwai at the Tokyo Institute of Technology-Frontier Collaborative Research Center (Japan), the group of Prof. Pey at the Microelectronics Centre, School of EEE, Nanyang Technological University (Singapore); and the group of Dr. Hurley at the Tyndall National Institute (Ireland).
• In 2004, Prof. Suñé received the Award of the Generalitat de Catalunya for the promotion of university research.
• In 2008, Prof. Suñé received the IBM Faculty Award (2008) for contributions to the field of oxide reliability.
• In 2004 and 2006, Prof. E. Miranda received research fellowships from the Matsumae International Foundation (Tokyo Institute of Technology, Japan) and Tan Chin Tuan (Nanyang Technological University, Singapore), respectively.
• In 2008, Prof. E. Miranda received the Walton Visitor Award from the Science Foundation Ireland (SFI).