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Nanocomp

Research Lines

Research projects

Industrial Contracts

  1. IBM Microelectronics. Physics and statistics of progressive breakdown of ultra-thin SiO2-based dielectrics: implications for reliability assessment of 45 nm CMOS technology and beyond (IBM Faculty Award)

 

Spanish Ministry of Science and Technology

  1. TEC2006-13731-C02-01. Performance, variability and instabilities in nanoelectronic devices
  2. TEC2006-13731-C02-01. Atomistic Monte Carlo simulation of electronic transport and its correlations in nanometric field-effect transistors.
  3. TEC2008-01883-E. EXPLORA project. Exploring negative capacitance effect in MOS structures with the goal of reducing power consumption in integrated circuits.
  4. TEC2008-01865-E. EXPLORA project. Towards artificial solids though hole patterned structures. 
  5. Field-effect controllable antifuse structures based on dielectric breakdown nanowires (submitted proposal)
  6. Simulation of electron transport with quantum correlation in nanodevices (submitted proposal)

Generalitat de Catalunya

  1. DPRU2004-04 Nanoelectronics: electron devices for the nanoscale.
  2. SGR-2005-00061. Grup Consolidat de Recerca en Enginyeria de Dispositius Micro y Nanoelectrònics.

Comissión Europea

  1. TRANSPINS. 017198/IRG7 Transport of spins in semiconductors.

Universitat Autònoma de Barcelona NANOCOMP, Research Group of Computational Nanoelectronics