Llibres

J. Suñé and E. Y. Wu (Invited book chapter), Defects Associated with Dielectric Breakdown in SiO₂-Based Gate Dielectrics.In: Defects in Microelectronic Materials and Devices, Editors: D.M. Fleetwood, S.T. Pantelides and R.D. Schrimpf.  CRC Press 2009 (Boca Ratón, FL, USA); ISBN: 978-1-4200-4376-1

A. Strong, E. Y. Wu, R.-P. Vollertsen, J. Suñé, G. La Rosa, S. E. Rauch III and T.D. Sullivan (Complete Textbook),Reliability Wearout Mechanisms in Advanced CMOS Technologies, IEEE Press Series on Microelectronic Systems, Wiley-IEEE Press 2009; ISBN 978-0-471-73172-6

Publicacions en revistes científiques

2009

E. Y. Wu and J. Suñé, On Voltage Acceleration Models of Time-to-Breakdown for SiO2-based Dielectrics Stressed in the FN Regime, IEEE Transactions on Electron Devices (submitted for publication)

G. Albareda, J. Suñé and X. Oriols, Many-particle Hamiltonian for open systems with full Coulomb interaction: Application to classical and quantum time-dependent simulations of nanoscale electron devices, Physical Review B, vol. 79 (2009) (in the press)

2008 

H. López, X. Oriols, J. Suñé and X. Cartoixà, Spin-Dependent Injection Model for Monte Carlo Device Simulation, J. Appl. Phys., vol. 104, 073702 (2008)

S.Tous, E.Y. Wu and J. Suñé, A compact model for oxide breakdown failure distribution in ultrathin oxides showing progressive breakdown, IEEE Electron Device Letters, vol. 29, 949-951 (2008).

R. Rurali, T. Markussen, J. Suñé, M. Brandbyge, and A.-P. Jauho, Modeling transport in ultrathin Si nanowires: charged versus neutral impurities, Nano Letters, 8, 2825-2828 (2008)

G.Albareda, J.Suñé and X.Oriols, Monte Carlo simulations of nanometric devices beyond the "mean-field" approximation",Journal of computational Electronics, vol. 7, 197-200 (2008)

H.López, G.Albareda, X.Cartoixà, J.Suñé and X.Oriols, Boundary conditions with Pauli exclusion and charge neutrality: Application to the Monte Carlo simulation of ballistic nanoscale devices, Journal of computational Electronics, vol. 7, 213-216 (2008)

H. López, X. Oriols, J. Suñé and  X. Cartoixà, High-Frequency Behavior of the Datta-Das Spin Transistor, Applied Physics Letters, vol. 93, 193502 (2008)

O. Moldovan et al., Compact charge and capacitance modeling of undoped ultra-thin body (UTB) MOSFETs, Solid-St. Electron, 52, 1867 (2008).

G. Rius et al., Characterization at the nanometer scale of local electron beam irradiation of CNT based devices, Mic.Eng, 85, 1413 (2008);

J. Moser et al., The environment of graphene probed by electrostatic force microscopy, Appl. Phys. Lett.,123507 (2008);

2007

D. Jiménez, X. Cartoixà, E. Miranda, J. Suñé, F. A. Chaves, and S. Roche, A simple drain current model for Schottky barrier carbon nanotube field effect transistors, Nanotechnology vol. 18 (2007)

R. Rurali, J. Suñé and X. Cartoixà, Ordered arrays of quantum wires through hole patterning: ab initio and empirical electronic structure calculations, Applied Physics Letters, vol. 90, 083118 (2007).

J. Suñé, E.Y. Wu and S. Tous, A physics-based deconstruction of the percolation model of oxide breakdown, Microelectronics Engineering, vol. 84, 1917-1920 (2007)

H. López, A. N. Chantis, J. Suñé and X. Cartoixà, Eigenstate fitting in the k.p method, J. Comput. Electron. 6 (1-3), 195-198 (2007).

J. Suñé, E. Wu and S. Tous, Physics-based percolation model for the breakdown of ultra-thin (down to 1 nm) gate oxides for advanced CMOS, ECS Transactions, vol. 8, pp. 177-183 (2007)

 M. Dubois et al., Multiscale modeling of Schottky-barrier MOSFETs with disilicide source/drain contacts: role of contacts in the carrier injection, Phys. Rev. B, 76, 115337 (2007);

G. Fedorov et al., Magnetically induced field effect in carbon nanotube devices, Nano Letters, 7, 960 (2007);

O. Moldovan et al., Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications,Solid-St. Electron., 51, 655 (2007);

O. Moldovan et al., Explicit analytical charge and capacitance models of undoped double-gate MOSFETs, IEEE Trans. Elect. Dev, 54, 1718 (2007);

O. Moldovan et al., Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs, IEEE Trans. Elect. Dev, 54, 162 (2007);