J. Suñé és coautor d'un nou llibre de text publicat per Wiley-IEEE Press que presenta un tractament detallat i rigurós dels mecanismes de fallada que afecten la fiabilitat dels dispositius i circuits CMOS

A Reliability Wearout Mechanisms in Advanced CMOS Technologies

Alvin W. Strong, Ernest Y. Wu, Rolf-Peter Vollertsen, Jordi Sune, Giuseppe La Rosa, Timothy D. Sullivan

ISBN: 978-0-471-73172-6 Hardcover 624 pages

Wiley-IEEE Press (June 2009)

Hardcover  £87.50 / €107.70

A comprehensive treatment of all aspects of reliability wearout mechanisms

This book covers everything students and professionals need to know about reliability wearout mechanisms, from basic concepts to the tools necessary to conduct reliability tests and analyze the results. It is the first book of its kind to bring together the pertinent physics, equations, and procedures for CMOS technology reliability in one place. Divided into six relatively independent chapters, the book covers:

•  Introduction to Reliability
• Gate Dielectric Reliability
• Negative Bias Temperature Instability
• Hot Carrier Injection
• Electro Migration Reliability
• Stress Voiding

Chapters conclude with practical appendices that provide very basic experimental procedures for readers who are conducting reliability experiments for the first time. Reliability Wearout Mechanisms in Advanced CMOS Technologies is ideal for students and new engineers who are looking to gain a working understanding of CMOS technology reliability. It is also suitable as a professional reference for experienced circuit design engineers, device design engineers, and process engineers.